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| 1 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications ? 2000 silicon storage technology, inc. the sst logo and superflash are registered trademarks of silicon storage technolo gy, inc. flashflex, in-application programming, iap and softlock are 344-2 8/00 trademarks of silicon storage technology, inc. these specifications are subject to change without notice. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 features: ? multi-purpose 8-bit 8051 family compatible microcontroller unit (mcu) with embedded superflash memory fully software and development toolset compatible as well as pin-for-pin package compatible with standard 8xc5x microcontrollers 256 bytes register/data ram 20/36 kbyte embedded high performance flexible superflash eeprom ? one 16/32 kbyte block (128-byte sector size) ? one 4 kbyte block (64-byte sector size) ? individual block security lock with softlock? feature ? 87c5x programmer compatible ? concurrent operation during in-application programming?(iap?) ? memory re-mapping for interrupt support during iap support external address range up to 64 kbyte of program and data memory high current drive on port 1 (5, 6, 7) pins three 16-bit timer/counter programmable serial port (uart) six interrupt sources at 2 priority levels selectable watchdog timer (wdt) four 8-bit i/o ports (32 i/o pins) ttl- and cmos-compatible logic levels extended power-saving modes ? idle mode ? power down mode with external interrupt wake-up ? standby (stop clock) mode high speed operation at 5 volts (0 to 33mhz) low voltage (2.7v) operation (0 to 12mhz) pdip-40, plcc-44 and tqfp-44 packages temperature ranges: ? commercial (0c to +70c) ? industrial (-40c to +85c) product description sst89c54 and sst89c58 are members of the flashflex51 family of 8-bit microcontrollers. the flashflex51 family is a family of embedded microcontroller products designed and manufactured on the state-of-the-art superflash cmos semiconductor process technology. as a member of the flashflex51 controller family, the sst89c54/58 uses the same powerful instruction set, has the same architecture, and is pin-for-pin compatible with standard 8xc5x microcontroller devices. sst89c54/58 comes with 20/36 kbyte of integrated on-chip flash eeprom program memory using the patented and proprietary silicon storage technology, inc. (sst) cmos superflash eeprom technology with the sst field enhancing tunneling injector split-gate memory cells. the superflash memory is partitioned into 2 independent program memory blocks. the primary superflash block 0 occu- pies 16/32 kbyte of internal program memory space and the secondary superflash block 1 occupies 4 kbyte of sst89c54/58?s internal program memory space. the 4 kbyte secondary superflash block can be mapped to the highest or lowest location of the 64 kbyte address space; it can also be hidden from the program counter and used as an independent eeprom-like data memory. the flash memory blocks can be programmed via a standard 87c5x otp eprom programmer fitted with a special adapter and firmware for sst89c54/58 devices. during the power-on reset, the sst89c54/58 can be configured as a master for source code storage or as a slave to an external host for in-application programming (iap) operation. sst89c54/58 is de- signed to be programmed ?in-system? and ?in-applica- tion? on the printed circuit board for maximum flexibility. the device is pre-programmed with a sample bootstrap loader in the memory (see note 1), demonstrating the initial user program code loading or subsequent user code updating via the ?iap? operation. in addition to 20/36 kbyte of superflash eeprom program memory on-chip, the sst89c54/58 can ad- dress up to 64 kbyte of program memory external to the chip. the sst89c54/58 have 256 x 8 bits of on-chip ram. up to 64 kbyte of external data memory (ram) can be addressed. the highly reliable, patented superflash technology and memory cell architecture have a number of important advantages for designing and manufacturing flash eeproms, when compared with other approaches. these advantages translate into significant cost and reliability benefits for our customers. note 1: the sample bootstrap loader is for the user?s reference and convenience only. sst does not guarantee the functionality or the usefulness of the sample bootstrap loader. chip-erase or block-erase operations will erase the pre-programmed sample code.
2 ? 2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications table of contents product features ............................................................................................................... .......................... 1 product description ............................................................................................................ ........................ 1 functional blocks .............................................................................................................. ........................... 4 functional block diagram ....................................................................................................... ........................ 4 pin assignments ................................................................................................................ .............................. 5 pin descriptions ............................................................................................................... ............................... 6 memory organization ............................................................................................................ ....................... 8 program memory ................................................................................................................. ........................... 8 memory re-mapping .............................................................................................................. ....................... 10 activation and deactivation of memory re-mapping ............................................................................... 11 data memory .................................................................................................................... ............................ 13 special function registers (sfr) ............................................................................................... .................. 13 cpu related sfrs ............................................................................................................... ................... 13 flash memory programming sfrs .................................................................................................. ........ 14 watchdog timer sfrs ............................................................................................................ ................ 17 timer/counters sfrs ............................................................................................................ .................. 18 interface sfrs ................................................................................................................. ........................ 18 flash memory programming ....................................................................................................... ............. 18 external host programming mode ................................................................................................. ............... 18 product identification ......................................................................................................... ...................... 20 external host mode commands .................................................................................................... .......... 20 external host mode clock source ................................................................................................ ........... 21 arming command ................................................................................................................. ................... 21 programming a sst89c54/58 ...................................................................................................... ........... 21 flash operation status detection (ext. host handshake) ....................................................................... 22 in-application programming mode ................................................................................................ ................ 26 in-application programming mode clock source ................................................................................... .. 26 iap enable bit ................................................................................................................. ........................ 26 in-application programming mode commands ....................................................................................... .26 polling ........................................................................................................................ .............................. 29 interrupt temination ........................................................................................................... ...................... 30 timers/counters ................................................................................................................ ........................... 31 3 ? 2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 serial i/o (uart) .............................................................................................................. ................................ 31 watchdog timer ................................................................................................................. ........................... 32 security lock .................................................................................................................. .............................. 32 hard lock ...................................................................................................................... ........................... 32 softlock ....................................................................................................................... ............................ 32 status of the security lock .................................................................................................... ....................... 33 reset .......................................................................................................................... ...................................... 34 power-on reset ................................................................................................................. .......................... 34 power-saving modes ............................................................................................................. ...................... 35 clock input options ............................................................................................................ ........................ 37 electrical specification ....................................................................................................... .................... 38 absolute maximum ratings ....................................................................................................... ................... 38 operation range ................................................................................................................ ........................... 38 reliability characteristics .................................................................................................... .......................... 38 dc electrical characteristics .................................................................................................. ....................... 39 ac electrical characteristics .................................................................................................. ....................... 42 explanation of symbols ......................................................................................................... ................. 43 external clock drive ........................................................................................................... ..................... 44 serial port timing - shift register mode ....................................................................................... ........... 45 product ordering information ................................................................................................... .......... 46 part number valid combinations ................................................................................................. ................. 46 part number cross reference guide .............................................................................................. .... 47 packaging diagrams ............................................................................................................. ....................... 48 4 ? 2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications f unctional b lock d iagram functional blocks rst v ss v dd ale/prog# psen# ea# xtal1 xtal2 superflash eeprom 4k x 8 program/erase & iap control superflash eeprom 16/32k x 8 cpu port 0 8 i/o 8 i/o 8 i/o 8 i/o port 1 power mode management bus controller t0 t1 t2 wdt 8-bit uart ram 256 x 8 interrupt control sfrs security lock mode control oscillator & timing port 2 port 3 344 ill b1.1 5 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 39 38 37 36 35 34 33 32 31 30 29 7 8 9 10 11 12 13 14 15 16 17 p1.5 p1.6 p1.7 rst (rxd) p3.0 nc (txd) p3.1 (int0#) p3.2 (int1#) p3.3 (t0) p3.4 (t1) p3.5 p0.4 (ad4) p0.5 (ad5) p0.6 (ad6) p0.7 (ad7) ea# nc ale/prog# psen# p2.7 (a15) p2.6 (a14) p2.5 (a13) 6 5 4 3 2 1 44 43 42 41 40 18 19 20 21 22 23 24 25 26 27 28 p1.4 p1.3 p1.2 p1.1 (t2 ex) p1.0 (t2) nc v dd p0.0 (ad0) p0.1 (ad1) p0.2 (ad2) p0.3 (ad3) (wr#) p3.6 (rd#) p3.7 xtal2 xtal1 v ss nc (a8) p2.0 (a9) p2.1 (a10) p2.2 (a11) p2.3 (a12) p2.4 44-pin plcc top view 344 ill f20.1 pin assignments f igure 1: p in a ssignments for 40-p in p lastic dip pi-p ackage f igure 2: p in a ssignments for 44-p in tqfp tqj-p ackage note: nc pins must be left unconnected. f igure 3: p in a ssignments for 44-p in plcc nj-p ackage 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 (t2) p1.0 (t2 ex) p1.1 p1.2 p1.3 p1.4 p1.5 p1.6 p1.7 rst (rxd) p3.0 (txd) p3.1 (int0#) p3.2 (int1#) p3.3 (t0) p3.4 (t1) p3.5 (wr#) p3.6 (rd#) p3.7 xtal2 xtal1 v ss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 v dd p0.0 (ad0) p0.1 (ad1) p0.2 (ad2) p0.3 (ad3) p0.4 (ad4) p0.5 (ad5) p0.6 (ad6) p0.7 (ad7) ea# ale/prog# psen# p2.7 (a15) p2.6 (a14) p2.5 (a13) p2.4 (a12) p2.3 (a11) p2.2 (a10) p2.1 (a9) p2.0 (a8) 40-pin pdip top view 344 ill f18.1 33 32 31 30 29 28 27 26 25 24 23 12 13 14 15 16 17 18 19 20 21 22 1 2 3 4 5 6 7 8 9 10 11 p1.5 p1.6 p1.7 rst (rxd) p3.0 nc (txd) p3.1 (int0#) p3.2 (int1#) p3.3 (t0) p3.4 (t1) p3.5 p0.4 (ad4) p0.5 (ad5) p0.6 (ad6) p0.7 (ad7) ea# nc ale/prog# psen# p2.7 (a15) p2.6 (a14) p2.5 (a13) 44 43 42 41 40 39 38 37 36 35 34 p1.4 p1.3 p1.2 p1.1 (t2 ex) p1.0 (t2) nc v dd p0.0 (ad0) p0.1 (ad1) p0.2 (ad2) p0.3 (ad3) (wr#) p3.6 (rd#) p3.7 xtal2 xtal1 v ss nc (a8) p2.0 (a9) p2.1 (a10) p2.2 (a11) p2.3 (a12) p2.4 44-pin tqfp top view 344 ill f19.1 6 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications t able 1: p in d escriptions symbol type 1 name and functions p0[7:0] i/o 1 port 0: port 0 is an 8-bit open drain bi-directional i/o port. as an output port each pin can sink several ls ttl inputs. port 0 pins that have 1 ? s written to them float, and in that state can be used as high-impedance inputs. port 0 is also the multiplexed low-order address and data bus during accesses to external memory. in this application it uses strong internal pull-ups when transitioning to 1 ? s. port 0 also receives the code bytes during flash memory programming, and outputs the code bytes during program verification. external pull-ups are required during program verification. p1[7:0] i/o with internal port 1: port 1 is an 8-bit bi-directional i/o port with internal pull-ups. the port 1 pull-ups output buffers can drive ls ttl inputs. port 1 pins that have 1 ? s written to them are pulled high by the internal pull-ups, and in that state can be used as inputs. as inputs, port 1 pins that are externally pulled low will source current (i il , on the data sheet) because of the internal pull-ups. p1(5, 6, 7) have high current drive of 16ma. port 1 also receives the low-order address bytes during flash memory programming and program verification. p1[0] i t2: (external count input to timer/counter 2), clock-out p1[1] i t2ex: (timer/counter 2 capture/reload trigger and direction control) p2[7:0] i/o with internal port 2: port 2 is an 8-bit bi-directional i/o port with internal pull-ups. port 2 pins pull-ups that have 1 ? s written to them are pulled high by the internal pull-ups, and in that state can be used as inputs. as inputs, port 2 pins that are externally pulled low will source current (i il , on the data sheet) because of the internal pull-ups. port 2 sends the high-order address byte during fetches from external program memory and during accesses to external data memory that use 16-bit address (movx@dptr). in this application it uses strong internal pull-ups when outputting 1 ? s. during accesses to external data memory that use 8-bit addresses (movx@ri), port 2 sends the contents of the p2 special function register. port 2 also receives some control signals and a partial of high-order address bits during flash memory programming and program verification. p3[7:0] i/o with internal port 3: port 3 is an 8-bit bidirectional i/o port with internal pull-ups. the port 3 pull-ups output buffers could drive ls ttl inputs. port 3 pins that have 1 ? s written to them are pulled high by the internal pull-ups, and in that state can be used as inputs. as inputs, port 3 pins that are externally pulled low will source current (i il , on the data sheet) because of the pull-ups. port 3 also serves the functions of various special features of the flashflex51 family. port 3 also receives some control signals and a partial of high-order address bits during flash memory programming and program verification. p3[0] i rxd: serial input line p3[1] o txd: serial output line p3[2] i int0#: external interrupt 0 p3[3] i int1#: external interrupt 1 p3[4] i t0: timer 0 external input p3[5] i t1: timer 1 external input p3[6] o wr#: external data memory write strobe p3[7] o rd#: external data memory read strobe 7 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 p in d escriptions ( continued ) symbol type 1 name and functions psen# o/i program store enable: psen# is the read strobe to external program memory. when the sst89c54/58 are executing from internal program memory, psen# is inactive (high). when the device is executing code from external program memory, psen# is activated twice each machine cycle, except that two psen# activations are skipped during each access to external data memory. while the rst input is continually held high (for more than ten machine cycles), a forced high-to-low input transition on the psen# pin will bring the device into the ? external host ? mode for the internal flash memory programming operation. rst i reset: a high logic state on this pin for two machine cycles (at least 24 oscillator periods), while the oscillator is running resets the device. after a successful reset is completed, if the psen# pin is driven by an input force with a high-to-low transition while the rst input pin is continually held high, the device will enter the ? external host ? mode for the internal flash memory programming operation, otherwise the device will enter the ? normal ? operation mode. ea# i external access enable: ea# must be connected to v ss in order to enable the sst89c54/58 to fetch code from external program memory locations starting at 0000h up to ffffh. note, however, that if the security lock is activated on either block, the logic level at ea# is internally latched during reset. ea# must be connected to v dd for internal program execution. the ea# pin can tolerate a high voltage 2 of 12v (see electrical specification). ale/prog# i/o address latch enable: ale is the output signal for latching the low byte of the address during accesses to external memory. this pin is also the programming pulse input (prog#). xtal1 i oscillator: input and output to the inverting oscillator amplifier. xtal1 is input to xtal2 o internal clock generation circuits from an external clock source. v dd i power supply: supply voltage during normal, idle, power down, and standby mode operations. vss i ground: circuit ground. (0v reference) 344 pgm t1.6 note: 1 ) i = input o = output 2) it is not necessary to receive a 12v programming supply voltage during flash programming. 8 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications memory organization the sst89c54/58 have separate address spaces for program and data memory. program memory there are two internal flash memory blocks in the sst89c54/58. the primary flash memory block 0 has 16/32 kbyte and occupies the address space 0000h to 3fffh/7fffh. the secondary flash memory block 1 has 4 kbyte and occupies the address space f000h to ffffh. the 16/32k x8 primary superflash block is organized as 128/256 uniform sectors with sector address from a15 to a7. each sector contains 2 rows with row address from a15 to a6. each row has 64 bytes with byte address from a5 to a0. f igure 4: s ector o rganization the 4k x8 secondary superflash block is organized as 64 uniform sectors with sector address from a15 to a6. each sector contains 2 rows with row address from a15 to a5. each row contains 32 bytes with byte address from a4 to a0. figure 4 shows the sector organization for sst89c54/58. when internal code operation is enabled (ea# = 1), the primary 16/32 kbyte flash memory block is always visible to the program counter for code fetching. figures 5 and 6 show the program memory organizations for the sst89c54/58. when internal code operation is enabled (ea# = 1), the secondary 4 kbyte flash memory block is selectively visible for code fetching. the secondary block is always accessible through the superflash mailbox registers: sfcm, sfcf, sfal, sfah, sfdt and sfst. when bit 7 of the superflash configuration mailbox register (sfcf[7]), sfr address location b1h, is set, the second- ary 4 kbyte block will be visible by program counter. 7fffh 7f80h 4000h 3fffh 0000h block 0 (16/32 kbyte) 344 ill f47.6 sector 255 sector 127 sector 0 3f80h 007fh ffffh ffc0h f03fh block 1 (4 kbyte) primary secondary sector 63 sector 0 f000h 89c58 89c54 9 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 5: sst89c54 p rogram m emory o rganization 344 ill f21.1 48 kbyte external 64 kbyte external 16 kbyte internal (block 0) 44 kbyte external 16 kbyte internal (block 0) 4 kbyte internal (block 1) ea# = 1 & sfcf[7] = 1 ea# = 1 & sfcf[7] = 0 ea# = 0 ffffh efffh f000h 4000h 0000h 3fffh ffffh 4000h 0000h ffffh 0000h 3fffh 10 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications memory re-mapping the sst89c54/58 memory re-mapping feature allows users to reorganize internal flash memory sectors so that interrupts may be serviced when block 0 of the internal flash is being programmed. since block 0 occupies the low order program address space of the 8051 architecture where the interrupt vectors reside, those interrupt vectors will normally not be available when block 0 is being programmed. sst89c54/58 provides four options of memory re- mapping (refer to table 2). when the lowest 4 kbytes are remapped, any program access within logical ad- dress range 0000h ? 0fffh will have the 4 most signifi- cant address bits forced to ? 1 ? , redirecting the access to f000h ? ffffh. note that the physical contents of the re-mapped portion of block 0 (i.e. physical locations 0000h ? 0fffh in the current example) will not be accessible. block 1 will still also be accessible through f000h ? ffffh. figures 7 and 8 show re-mapped program memory organization for the sst89c54/58. f igure 6: sst89c58 p rogram m emory o rganization 344 ill f11.1 32 kbyte external 64 kbyte external 32 kbyte internal (block 0) 28 kbyte external 32 kbyte internal (block 0) 4 kbyte internal (block 1) ea# = 1 & sfcf[7] = 1 ea# = 1 & sfcf[7] = 0 ea# = 0 ffffh efffh f000h 8000h 0000h 7fffh ffffh 8000h 0000h ffffh 0000h 7fffh 11 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 activation and deactivation of memory re-mapping the actual amount of memory that is re-mapped is controlled by map_en[1:0] bits as shown in table 2. the map_en[1:0] bits are the same bits as sfcf[1:0]. the map_en[1:0] bits are under software control and can be changed during program execution. since changing re- mapping will cause program re-location, it is advisable that the instruction that changes the map_en[1:0] be in the portion of memory that is not affected by the re- mapping change. the map_en[1:0] bits are initialized at reset according to the contents of two non-volatile register bits, re- map[1:0] (as shown in table 2). the re-map[1:0] bits are programmed via prog_rb1 and prog_rb0 external host mode commands. refer to external host program- ming mode section for prog_rb1 and prog_rb0 commands. the contents of map_en[1:0] are only updated accord- ing to re-map[1:0] on a successful reset. any subse- quent alteration to the re-map[1:0] bits will not automati- cally change the map_en[1:0] bits without a reset. similarly, changes to map_en[1:0] during program ex- ecution will not change re-map[1:0] bits. to deactivate memory re-mapping, a chip-erase op- eration will revert re-map[1:0] to the default status of ? 11 ? , disabling re-mapping. programming 00b to sfcf[1:0] register also deactivates memory re-map- ping. the effect of programming re-map[1:0] is available only after the next reset. refer to in-application mode commands section for more detailed information. t able 2: r e - mapping t able re-map [1:0] 1 map_en 2,3 comments 11 00 re-mapping is turned off. program memory is in normal configuration. 10 01 1 kbyte of flash memory location is re-mapped. program access to location 0000h-03ffh is redirected to f000h ? f3ffh. 01 10 2 kbytes of flash memory location are re-mapped. program access to location 0000h-07ffh is redirected to f000h ? f7ffh. 00 11 4 kbytes of flash memory location is re-mapped. program access to location 0000h-0fffh is redirected to f000h ? ffffh. 1 re-map[1:0] are nonvolatile registers which are examined only during reset. 2 map_en[1:0] are initialized according to re-map[1:0] during reset. 3 map_en[1:0] are located in sfcf[1:0], they determine the re-mapping configuration. they may be changed by the program at run t ime. 344 pgm t2.3 12 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications f igure 7: sst89c54 r e -m apped p rogram m emory o rganization f igure 8: sst89c58 r e -m apped p rogram m emory o rganization 28 kbyte external 31/30/28 kbyte internal (block 0) 1/2/4 kbyte internal (block 1) 4 kbyte internal (block 1) ea# = 1 & sfcf[7] = 1 sfcf [1:0] = 01/10/11 ffffh efffh f000h 7fffh 8000h 7fffh 8000h 0000h 32 kbyte external 31/30/28 kbyte internal (block 0) 1/2/4 kbyte internal (block 1) 344 ill f36.1 ea# = 1 & sfcf[7] = 0 sfcf [1:0] = 01/10/11 ffffh 0000h 44 kbyte external 15/14/12 kbyte internal (block 0) 1/2/4 kbyte internal (block 1) 4 kbyte internal (block 1) ea# = 1 & sfcf[7] = 1 sfcf [1:0] = 01/10/11 ffffh efffh f000h 3fffh 4000h 3fffh 4000h 0000h 48 kbyte external 15/14/12 kbyte internal (block 0) 1/2/4 kbyte internal (block 1) 344 ill f35.3 ea# = 1 & sfcf[7] = 0 sfcf [1:0] = 01/10/11 ffffh 0000h 13 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 data memory sst89c54/58 have 256 x 8 bits of on-chip ram and can address up to 64 kbytes of external data memory. special function registers (sfr) most of the unique features of the flashflex51 microcontroller family are controlled by bits in special function registers (sfrs) located in the flashflex51 sfr memory map shown below. individual descriptions of each sfr are provided and reset values indicated in tables 3 a to 3 e . f8 f0 e8 e0 d8 d0 c8 c0 b8 b0 a8 a0 98 90 88 80 ff f7 ef e7 df d7 cf c7 bf b7 af a7 9f 97 8f 87 b* acc* psw* t2con* rcap2l rcap2h tl2 th2 wdtc* ip* p3* sfcf sfcm sfal sfah sfdt sfst ie* p2* scon* sbuf p1* tcon* tmod tl0 tl1 th0 th1 p0* sp dpl dph wdtd pcon 8 bytes flashflex51 sfr memory map * = bit addressable sfrs all addresses are hexadecimal 344 ill f23.1 sst89c54/58 special function registers t able 3 a : cpu related sfr s symbol description direct bit address, symbol, or alternative port function reset address msb lsbvalue acc* accumulator e0h acc[7:0] 00h b* b register f0h b[7:0] 00h psw* program status d0h cy ac f0 rs1 rs0 ov f1 p 00h word sp stack pointer 81h sp[7:0] 07h dpl data pointer 82h dpl[7:0] 00h low 0 dph data pointer 83h dph[7:0] 00h high 0 ie* interrupt enable a8h ea - et2 es0 et1 ex1 et0 ex0 40h ip* interrupt priority b8h - - pt2 ps pt1 px1 pt0 px0 xx000000b pcon power control 87h smod - - - gf1 gf0 pd idl 0xxx0000b * = bit addressable sfrs 344 pgm t3a.3 14 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications superflash status register (sfst) (read only register) location 76543210 reset value 0b6h secd2 secd1 secd0 ? busy flash_busy ?? xxx00000b symbol function secd2 security bit 1. secd1 security bit 2. secd0 security bit 3. please refer to table 8 for security lock options. busy burst-program completion polling bit. 1: device is busy with flash operation. 0: device is available for next burst-program operation. flash_busy flash operation completion polling bit. 1: device is busy with flash operation. 0: device has fully completed the last command, including burst-program. t able 3 b : f lash m emory p rogramming sfr s symbol description direct bit address, symbol, or alternative port function reset address msb lsb value sfst superflash status b6h secd[2:0] - busy flash_busy - - xxx00000b sfcf superflash b1h vis iapen - - - - map_en 000000xxb configuration sfcm superflash b2h fie fcm 00h command sfdt superflash data b5h superflash data register 00h sfal superflash b3h superflash low order byte address register ? a7 to a0 (sfal) 00h address low sfah superflash b4h superflash high order byte address register ? a15 to a8 (sfah) 00h address high 344 pgm t3b.4 15 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 superflash configuration register (sfcf) location 76543210 reset value 0b1h vis iapen ???? map_en1 map_en0 000000xxb symbol function vis upper flash block visibility. 1: 4 kbyte flash block visible from f000-ffff. 0: 4 kbyte flash block not visible. iapen enable iap operation. 1: iap commands are enabled. 0: iap commands are disabled. map_en1 map enable bit 1. map_en0 map enable bit 0. map_en[1:0] are initialized to default value according to re-map [1:0] during reset. refer to table 2. superflash command register (sfcm) location 76543210 reset value 0b2h fie fcm6 fcm5 fcm4 fcm3 fcm2 fcm1 fcm0 00000000b symbol function fie flash interrupt enable. 1: int1# is re-assigned to signal iap operation completion. external int1# interrupts are ignored. 0: int1# is not reassigned. fcm[6:0] flash operation command. 000_0001b chip-erase. 000_0110b burst-program. 000_1011b sector-erase. 000_1100b byte-verify. (1) 000_1101b block-erase. 000_1110b byte-program. all other combinations are not implemented, and reserved for future use. (1) byte-verify has a single machine cycle latency and will not generate any int1# interrupt regardless of fie. 16 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications superflash data register (sfdt) location 7 6 543210 reset value 0b5h superflash data register 00000000b symbol function sfdt mailbox register for interfacing with flash memory block (data register). superflash address registers (sfal) location 7 6 543210 reset value 0b3h superflash low order byte address register 00000000b symbol function sfal mailbox register for interfacing with flash memory block. (low order address register). superflash address registers (sfah) location 7 6 543210 reset value 0b4h superflash high order byte address register 00000000b symbol function sfah mailbox register for interfacing with flash memory block. (high order address register). 17 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 watchdog timer control register (wdtc) location 76543210 reset value 0c0h ? ?? ? wdre wdts wdt swdt 00000000b symbol function wdre watchdog timer reset enable. 1: enable watchdog timer reset. 2: disable watchdog timer reset. wdts watchdog timer reset flag. 1: hardware sets the flag on watchdog overflow. 0: external hardware reset clears the flag. flag can also be cleared by writing a 1. flag survives if chip reset happened because of watchdog timer overflow. wdt watchdog timer refresh. 1: software sets the bit to force a watchdog timer refresh. 0: hardware resets the bit when refresh is done. swdt start watchdog timer. 1: start wdt. 0: stop wdt. watchdog timer data/reload register (wdtd) location 76543210 reset value 086h watchdog timer data/reload 00000000b symbol function wdtd initial/reload value in watchdog timer. t able 3 c : w atchdog t imer sfr s wdtc* watchdog timer c0h - -- - wdre wdts wdt swdt x0h control wdtd watchdog timer 86h wdrl 00h data/reload * = bit addressable sfrs 344 pgm t3c.1 18 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications flash memory programming the sst89c54/58 internal flash memory can be pro- grammed or erased using the following two methods: external host mode (parallel only) in-application programming (iap) mode (parallel or serial) external host programming mode external host programming mode provides the user with direct flash memory access to program the flash memory without using the cpu. external host mode is entered by forcing psen# from a logic high to a logic low while rst input is being held continuously high. the sst89c54/58 will stay in external host mode as long as rst = 1 and psen# = 0. a read-id operation is necessary to ? arm ? the device, no other external host mode command can be enabled until a read-id is performed. in external host mode, the internal flash memory blocks are accessed through the re-assigned i/o port pins (see figure 9 for details) by an external host, such as an mcu programmer, pcb tester or a pc controlled development board. t able 3 d : t imer /c ounters sfr s tmod timer/counter 89h timer 1 timer 0 00h mode control gate c/t# m1 m0 gate c/t# m1 m0 tcon* timer/counter 88h tf1 tr1 tf0 tr0 ie1 it1 ie0 it0 00h control th0 timer 0 msb 8ch th0[7:0] 00h tl0 timer 0 lsb 8ah tl0[7:0] 00h th1 timer 1 msb 8dh th1[7:0] 00h tl1 timer 1 lsb 8bh tl1[7:0] 00h t2con* timer / counter 2 c8h tf2 exf2 rclk tclk exen2 tr2 c/t2# cp/rl2# 00h control th2 timer 2 msb cdh th2[7:0] 00h tl2 timer 2 lsb cch tl2[7:0] 00h rcap2h timer 2 capture msb cbh rcap2h[7:0] 00h rcap2l timer 2 capture lsb cah rcap2l[7:0] 00h * = bit addressable sfrs 344 pgm t3d.0 t able 3 e : i nterface sfr s sbuf serial data buffer 99h sbuf[7:0] indeterminate scon* serial port control 98h sm0 sm1 sm2 ren tb8 rb8 t1 r1 00h p0* port 0 80h p0[7:0] ffh p1* port 1 90h - ---- t2 ext2ffh p2* port 2 a0h p2[7:0] ffh p3* port 3 b0h rd# wr# t1 t0 int1# int0# txd0 rxd0 ffh * = bit addressable sfrs 344 pgm t3e.3 19 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 operation rst psen# prog# ea# p3[7] p3[6] p2[7] p2[6] p0[7:0] p1[7:0] p3[5:4] /ale p2[5:0] read-id h l h h l l l l do al ah chip-erase h l ? hll lh x x x block-erase h l ? h h h l h x x a[15:12] sector-erase h l ? hhl hh x al ah byte-program h l ? hhh hl di al ah burst-program h l ? hlh hl di al ah byte-verify h l h h h h l l do al ah (read) prog-sb1 h l ? hhh hh x x x prog-sb2 h l ? hll hh x x x prog-sb3 h l ? hlh lh x x x prog-rb0 h l ? hhl l l x x x prog-rb1 h l ? hhl lh x x x note: symbol ? signifies a negative pulse and the command is asserted during the low state of prog#/ale input. all other combinations of the above input pins are invalid and may result in unexpected behaviors. note: l = logic low level; h = logic high level; x = don ? t care; al = address low order byte; ah = address high order byte; di = data input; do = data output; a[15:12] = 0xxxb for block 0 and a[15:12} = ? fh ? for block 1. t able 4: e xternal h ost m ode c ommands 344 pgm t4.4 when the chip is in the external host mode, port 0 pins are assigned to be the parallel data input and output pins. port 1 pins are assigned to be the non-multiplexed low order address bus signals for the internal flash memory (a7-a0). the first six bits of port 2 pins (p2[5:0]) are assigned to be the non-multiplexed upper order address bus signals for the internal flash memory (a13-a8) along with two of the port 3 pins (p3[5] as a15 and p3[4] as a14). two upper order port 2 pins (p2[7] and p2[6]) and two upper order port 3 pins (p3[7] and p3[6]) along with rst, psen#, prog#/ale, ea# pins are assigned as the control signal pins. the port 3 pin (p3[3]) is assigned to be the ready/busy status signal, which can be used for handshaking with the external host during a flash memory programming operation. the flash memory programming operation (erase, program, verify, etc.) is internally self-timed. the insertion of an ? arming ? command prior to entering the external host mode by utilizing the ? read-id ? op- eration provides additional protection for inadvertent writes to the internal flash memory caused by a noisy or unstable system environment during power-up or brown- out conditions. the external host mode uses twelve (12) hardware commands, which are decoded from the control signal pins, to facilitate the internal flash memory erase, pro- gram and verify processes. the external host mode is enabled on the falling edge of psen#. the external host mode commands are enabled on the falling edge of ale/ prog#. the list in table 4 outlines all the commands and the respective control signal assignment. 20 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications f igure 9: i/o p in a ssignments for e xternal h ost m ode product identification the read-id command accesses the signature bytes that identifies the device as an sst89c54/58 and the manufacturer as sst. external programmers primarily use these signature bytes, shown in table 5, in the selection of programming algorithms. the read-id com- mand is selected by the byte code of 00h on p2[7:6] and p3[7:6]. see figure 10 for timing waveforms. external host mode commands the twelve sst89c54/58 external host mode com- mands are read-id, chip-erase, block-erase sector-erase, byte-program, burst-pro- gram, byte-verify, prog-sb1, prog-sb2, prog-sb3, prog-rb0 and prog-rb1. see table 4 for all signal logic assignments and table 7 for all timing parameter values for the external host mode com- mands. the critical timing for all erase and program commands, is self-generated by the on-chip flash memory controller. the high-to-low transition of the prog# signal initiates the erase and program com- mands, which are synchronized internally. the read commands are asynchronous reads, independent of the prog# signal level. the following three commands are used for erasing all or part of the memory array. all the data in the memory array will be erased to ffh. memory locations that are to be programmed must be in the erased state prior to programming. selection of the erase command to use, prior to programming the device, will be dependent upon the contents already in the array and the desired field size to be programmed. the chip-erase command erases all bytes in both memory blocks (block 0 and block 1) of the sst89c54/ 58. this command ignores the security lock status and will erase the security bits and the re-map bits. the chip-erase command is selected by the binary code of 00b on p3[7:6] and 01b on p2[7:6]. see figure 11 for timing waveforms. the block-erase command erases all bytes in one of the memory blocks (16/32k or 4k) of the sst89c54/58. this command will not be enabled if the security lock is enabled on the selected memory block. the selection of the memory block to be erased is determined by a[15:12] (p3[5], p3[4], p2[5], p1[4]). if a15 is a ? 0 ? , then the primary flash memory block 0 (16/32k), is selected. if a[15:12] = ? fh ? , then the secondary flash memory block 1 (4k) is selected. the block-erase command is selected by the binary code of 11b on p3[7:6] and 01b on p2[7:6]. see figure 12 for the timing waveforms. the sector-erase command erases all of the bytes in a sector. the sector size for the primary flash memory (addresses 0000h-3fffh/7fffh) is 128 bytes. the sector size for the secondary flash memory (addresses f000h-ffffh) is 64 bytes. this command will not be executed if the security lock is enabled on the selected memory block. the selection of the memory sector to be erased is determined by p1[7:6] (a7 & a6), p2[5:0] (a13- a8) and p3[5:4] (a15 & a14). the sector-erase command is selected by the binary code of 10b on p3[7:6] and 11b on p2[7:6]. see figure 13 for timing waveforms. t able 5: s ignature b ytes t able address data manufacturer ? s code 30h bfh sst89c54 device code 31h e4h sst89c58 device code 31h e2h 344 gpm t5.1 flash control signals address bus a7-a0 flash control signals address bus a13-a8 input/ output data bus port 0 v ss xtal1 xtal2 busy/ready port 3 v dd rst port 2 port 1 ea# ale / prog# psen# 7 6 5 a15 a14 4 3 2 1 0 7 6 7 6 5 4 3 2 1 0 0 7 6 0 address bus a15-a14 344 ill f01.1 21 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 the byte-program and burst-program com- mands are used for programming new data into the memory array. selection of which program command to use will be dependent upon the desired programming field size. programming will not take place if any security locks are enabled on the selected memory block. the byte-program command programs data into a single byte. ports p0[7:0] are used for data in. the memory location is selected by p1[7:0], p2[5:0], and p3[5:4] (a15-a0). the byte-program command is selected by the binary code of 11b on p3[7:6] and 10b on p2[7:6]. see figure 14 for timing waveforms. the burst-program command programs data to an entire row, sequentially byte-by-byte. ports p0[7:0] are used for data in. the memory location is selected by p1[7:0], p2[5:0], and p3[5:4] (a15-a0). the burst- program command is selected by the binary code of 01b on p3[7:6] and 10b on p2[7:6]. see figure 15 for timing waveforms. the byte-verify command allows the user to verify that the sst89c54/58 correctly performed an erase or program command. ports p0[7:0] are used for data out. the memory location is selected by p1[7:0], p2[5:0], and p3[5:4] (a15-a0). the byte-verify command is se- lected by the binary code of 11b on p3[7:6] and 00b on p2[7:6]. this command will be disabled if any security locks are enabled on the selected memory block. see figure 16 for timing waveforms. the prog-sb1, prog-sb2, prog-sb3 commands program the security bits, the functions of these bits are described in a security lock section and also in table 8. once programmed, these bits can only be cleared through a chip-erase command. the prog-rb1, and prog-rb0 commands program the re-map[1:0] bits. the re-map[1:0] bits determine the memory re-mapping default option on reset. upon completion of the reset sequence, the map_en[1:0] bits are initialized to the default value set by the re- map[1:0] bits according to table 2. subsequent program manipulation of map_en[1:0] bits will alter the memory re-mapping option but will not change the re-map[1:0] bits. therefore, any changes to map_en[1:0], without corresponding updates to re-map[1:0], will not survive a reset cycle. if an external host mode command, except for chip- erase, is issued to a locked memory block, the device will ignore this command. external host mode clock source in external host mode, an internal oscillator will provide clocking for the sst89c54/58. the on-chip oscillator will be turned on as the sst89c54/58 enters external host mode; i.e. when psen# goes low while rst is high. the oscillator provides both clocking for the flash control unit as well as timing references for program and erase operations. during external host mode, the cpu core is held in reset. upon exit from external host mode, the internal oscillator is turned off. the same oscillator also provides the time base for the watchdog timer and timing references for iap mode program and erase operations. see more detailed de- scription in later sections. arming command an arming command sequence must take place before any external host mode sequence command is recog- nized by the sst89c54/58. this prevents accidental triggering of external host mode commands due to noise or programmer error. the arming command is as follows: 1. psen# goes low while rst is high. this will get the machine in external host mode, re-configur- ing the pins. 2. a read-id command is issued and held for 1 ms. after the above sequence, all other external host mode commands are enabled. before the read-id command is received, all other external host commands received are ignored. programming a sst89c54/58 to program data into the memory array, apply power supply voltage (v dd ) to v dd and rst pins, and perform the following steps: 1. maintain rst high and toggle psen# from logic high to low, in sequence per the appropriate timing diagram. 2. raise ea# high (either v ih or v h ). 3. issue read-id command to enable the external host mode. 4. verify that the memory blocks or sectors for pro- gramming is in the erased state, ffh. if they are not erased, then erase them using the appropriate erase command. 5. select the memory location using the address lines (p1[7:0], p2[5:0], p3[5:4]). 6. present the data in on p0[7:0]. 7. pulse ale/prog#, observing minimum pulse width. 8. wait for low to high transition on ready/busy# (p3[3]). 9. repeat steps 5 ? 8 until programming is finished. 10. verify the flash memory contents. 22 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications flash memory programming with external host mode (figures 10-16) f igure 10: r ead -id read chip signature and identification registers at the addressed location. flash operation status detection (ext. host handshake) the sst89c54/58 provide two firmware means for an external host to detect the completion of a flash memory operation to optimize the program or erase time. the end of a flash memory operation cycle (erase or pro- gram) can be detected by: 1) monitoring the ready/ busy# bit at p3[3]; 2) monitoring the data# polling bit at p0[7] and p0[3]. ready/busy# (p3[3]) the progress of the flash memory programming can be monitored by the ready/busy# output signal. p3[3] is driven low, some time after ale/prog# goes low during a flash memory operation to indicate the busy# status of the flash control unit (fcu). p3[3] is driven high when the flash programming operation is completed to indi- cate the ready status. during a burst-program operation, p3[3] is driven high (ready) in between each byte-programmed among the burst to indicate the ready status to receive the next byte. when the external host detects the ready status after a byte among the burst is programmed, it shall then put the data/address (within the same page) of the next byte on the bus and drive ale/prog# low (pulse), before the time-out limit expires. see table 7 for details. burst- program command presented after time-out will wait until next cycle. therefore, it will have longer program- ming time. data# polling (p0[7] & p0[3] during a program operation, any attempts to read (byte- verify), while the device is busy, will receive the comple- ment of the data of the last byte loaded (logic low, i.e. ? 0 ? for an erase) on p0[3] and p0[7] with the rest of the bits ? 0 ? . during a program operation, the byte-verify com- mand is reading the data of the last byte loaded, not the data at the address specified. the true data will be read from p0[7], when the device completes each byte programmed among the burst to indicate the ready status to receive the next byte. when the external host detects the ready status after a byte among the burst is programmed, it should then put the data/address (in the same page) of the next byte on the bus and drive ale/prog# low immediately, before the time-out limit expires (see programming time spec. in table 7 for details.). the true data will be read from p0[3], when the burst-program command is terminated and the device is ready for the next operation. the termination of the burst-program can be accom- plished by: 1) change to a new x-addresses (note: the x-address range are different for the 4kx8 flash block 1 and for the 16/32k x 8 flash block 0.); 2) change to a new command that requires a high to low transition of the ale/ prog# (i.e. any erase or program command); 3) wait for time out limit expires (20 ?); when programming the next byte. 344 ill f02.5 0030h t su t es rst psen# ale/prog# ea# p3[5:4] ,p2[5:0] ,p1 p2[7:6] ,p3[7:6] p0 0000b t rd bfh 0031h 0000b t rd e4h/e2h 23 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 11: c hip -e rase erase both flash memory blocks. security lock is ignored and the security bits are erased too. f igure 12: b lock -e rase erase one of the flash memory blocks, if the security lock is not activated on that flash memory block. the highest address bits a[15:12] determines which block is erased. for example, if a15 is ? 0 ? , primary flash memory block is erased. if a[15:12] = ? fh ? , the secondary block is erased. rst psen# ale/prog# p3[3] p3[7:6], p2[7:6] 0001b t ce t prog t ads 344 ill f03.4 t es t su t dh ea# rst psen# ale/prog# p3[3] p3[7:6], p2[7:6] p3[5:4], p2[5:0] 1101b ah t be t prog t su t ads 344 ill f04.5 t es t dh ea# 24 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications f igure 14: b yte -p rogram ; prog-sb3, prog-sb2, prog-sb1, prog-rb1 and prog-rb0 program the addressed code byte if the byte location has been successfully erased and not yet programmed. byte- program operation is only allowed when the security lock is not activated on that flash memory block. f igure 13: s ector -e rase erase the addressed sector if the security lock is not activated on that flash memory block. rst psen# ale/prog# p3[3] p3[7:6], p2[7:6] p3[5:4], p2[5:0] 1011b ah t se t prog t ads 344 ill f05.4 p1 al t dh t su t es ea# rst psen# ale/prog# ea# p3[3] p3[5:4], p2[5:0] p1 ah al t pb t prog t ads 344 ill f06.6 p0 p3[7:6], p2[7:6] di 1110b* * see table 4 for control signal assignments for prog-sbx and prog-rbx. t dh t su t es 25 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 15: b urst -p rogram program the entire addressed row by burst programming each byte sequentially within the row if the byte location has been successfully erased and not yet programmed. this operation is only allowed when the security lock is not activated on that flash memory block. f igure 16: b yte -v erify read the code byte from the addressed flash memory location if the security lock is not activated on that flash memory block. rst psen# ale/prog# p3[3] row address byte address row address byte address t prog t ads 344 ill f07.4 p0 p3[7:6], p2[7:6] di byte address di row address byte address di 0110b t bup1 t dh t dh t dh t bup t bup t buprcv 16k/32k block row address = a15: a6; byte address = a5:a0 4k block row address = a15: a5; byte address = a4:a0 t su t es ea# 344 ill f08.3 p3[5:4], p2[5:0] al do 1100b p3[7:6], p2[7:6] t su rst psen# ale/prog# ea# p0 p1 t ala t oa t aha ah t es 26 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications in-application programming mode the sst89c54/58 offers 20/36 kbyte of in-application programmable flash memory. during in-application pro- gramming, the cpu of the microcontroller enters iap mode. the two blocks of flash memory allows the cpu to concurrently execute user code from one block, while the other is being reprogrammed. the cpu may also fetch code from an external memory while all internal flash is being reprogrammed. the chip can start the in- application programming operation either with the exter- nal program code execution being enabled (ea# = l) or disabled (ea#=h). the mailbox registers (sfst, sfcm, sfal, sfah, sfdt and sfcf) located in the special function register (sfr), control and monitor the device ? s erase and program process. table 6 outlines the commands and their associated settings of the mailbox registers. in-application programming mode clock source during iap mode, both the cpu core and the flash controller unit are driven off the external clock. however, an internal oscillator will provide timing references for program and erase operations. the duration of program and erase operations will be identical between external host mode and in-application mode. the internal oscil- lator is only turned on when required, and is turned off as soon as the flash operations complete. iap enable bit the iap enable bit, sfcf[6], initializes in-application programming mode, enabling iap command decoding. until this bit is set all flash programming iap commands will be ignored. in-application programming mode commands all of the following commands can only be initiated in the iap mode. in all situations, writing the control byte to the (sfcm) register will initiate all of the operations. all commands (except chip-erase) will not be enabled if the security features are enabled on the selected memory block. the critical timing for all erase and program commands, is self-generated by the on-chip flash controller unit. the two program commands are for programming new data into the memory array. the portion of the memory array to be programmed should be in the erased state, ffh. if the memory is not erased, then erase it with an appropriate erase command. warning: do not write (program or erase) to a block that the code is cur- rently fetching from. this will cause unpredictable program behavior and may corrupt program data. the chip-erase command erases all bytes in both memory blocks (16/32k and 4k). this command ignores the security lock status and will erase the security lock bits and re-map bits. the chip-erase command sequence is as follows: set-up mov sfdt, #55h interrupt scheme mov sfcm, #81h polling scheme mov sfcm, #01h int1# occurrence indicates completion sfst[2] indicates operation completion iap enable orl sfcf, #40h 344 ill f39.2 the block-erase command erases all bytes in one of the two memory blocks (16/32k or 4k). the selection of the memory block to be erased is determined by the ? a15 ? bit (sfah[7]) of the superflash address register. if sfah[7] = 0b, the primary flash memory block 0 is selected (16/32k). if sfah[7:4] = fh, the secondary flash memory block 1 is selected (4k). the block- erase command sequence is as follows: 27 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 set-up mov sfdt, #55h iap enable or interrupt scheme mov sfcm, #8dh polling scheme mov sfcm, #0dh erase 4 kblock mov sfah, #f0h erase 32 kblock mov sfah, #00h int1# occurrence indicates completion sfst[2] indicates operation completion 344 ill f40.5 the sector-erase command erases all of the bytes in a sector. the sector size for the primary flash memory block 0 (addresses 0000h-3fffh/7fffh) is 128 bytes. the sector size for the secondary flash memory block 1 (address f000h-ffffh) is 64 bytes. the sector- erase command sequence is as follows: program sector address mov sfah, #sector_addressh mov sfal, #sector_addressl interrupt scheme mov sfcm, #8bh polling scheme mov sfcm, #0bh int1# occurrence indicates completion sfst[2] indicates operation completion 344 ill f41.3 iap enable the 16/32 kbyte memory contains 128/256 uniform sectors of 128 bytes each. the 4 kbyte memory contains 64 uniform sectors of 64 bytes each. the selection of the sector to be erased is determined by the contents of sfah, sfal. please refer to figure 4 for an illustration of memory sector organization. the byte-program command programs data into a single byte. the byte-program command sequence is as follows: move data to sfdt mov sfdt, #data interrupt scheme mov sfcm, #8eh polling scheme mov sfcm, #0eh int1# occurrence indicates completion sfst[2] indicates operation completion program byte address mov sfah, #byte_addressh mov sfal, #byte_addressl 344 ill f42.3 iap enable the burst-program command programs data into half of a sector (row) which has the same row address, sequentially byte-by-byte. refer to the memory organi- zation section and figures 4 and 15 for details. the movc command and all iap commands except burst- program are invalid during the burst-program cycle. the burst-program command sequence is as follows: 28 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications move data to sfdt mov sfdt, #data sfst[2] indicates burst-program completion interrupt scheme mov sfcm, #86h polling scheme mov sfcm, #06h int1# occurrence indicates completion sfst[3] indicates byte completion next same row address y n program another byte program byte address mov sfah, #byte_addressh mov sfal, #byte_addressl 344 ill f43.5 iap enable the byte-verify command allows the user to verify that the sst89c54/58 has correctly performed an erase or program command. the byte-verify command sequence is as follows: byte-verify command returns the data byte in sfdt if the command is successful. the user is required to check that the previous flash operation has fully com- pleted before issuing a byte-verify. prog-sb3, prog-sb2, prog-sb1 commands are used to program the security bits (see table 8). these commands work similarly to a byte-program com- mand, except no address and data is specified. upon completion of any of those commands, the security options will be updated immediately. security bits previously in un-programmed state can be programmed by these commands. the prog-sb3, prog-sb2, prog-sb1 sequences are as follows: set-up mov sfdt, #55h or or interrupt int1# occurrence completion polling sfst[2] indicates completion program sb2 mov sfcm, #03h or mov sfcm, #83h program sb1 mov sfcm, #0fh or mov sfcm, #8fh program sb3 mov sfcm, #05h or mov sfcm, #85h 344 ill f45.3 iap enable prog-rb1, prog-rb0 commands are used to pro- gram the re-map[1:0] bits (see table 2). these com- mands work similarly to a byte-program command except no address and data is needed. these com- mands only change the re-map[1:0] bits and have no effect on map_en[1:0] until after a reset cycle. there- fore, the effect of these commands is not immediate. mov sfcm, #0ch sfdt register contains data program byte address mov sfah, #byte_addressh mov sfal, #byte_addressl 344 ill f44.2 iap enable 29 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 re-map bits previously in un-programmed state can be programmed by these commands. the prog-rb1, prog-rb0 sequences are as follows: set-up mov sfdt, #55h or interrupt int1# occurrence completion polling sfst[2] indicates completion program re-map [1] mov sfcm, #09h or mov sfcm, #89h program re-map [0] mov sfcm, #08h or mov sfcm, #88h 344 ill f46.4 iap enable polling a command that uses the polling method to detect flash operation completion should poll on the flash_busy bit (sfst[2]). when flash_busy de-asserts (logic 0), the device is ready for the next operation. the busy bit (sfst[3]) is provided for burst-program. in between bytes within a burst sequence, the busy bit will become logic 0 to indicate that the next burst- program byte should be presented. completion of the full burst cycle is indicated also by flash_busy bit (sfst[2]). movc instruction may also be used for verification of the programming and erase operation of the flash memory. movc command will fail if it is directed at a flash block that is still busy. 30 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications interrupt termination if interrupt termination is selected, (sfcm[7] is set), then an interrupt (int1) will be generated to indicate flash operation completion. under this condition, the int1 becomes an internal interrupt source. the int1# pin can now be used as a general purpose port pin, and it cannot be a source of external interrupt 1. for an interrupt to occur, appropriate interrupt enable bits must be set. ex1 and ea bits of ie register must be set. the tcon[2] (it1) bit of tcon register must also be set for edge trigger detection. operation sfah [7:0] sfal [7:0] sfdt [7:0] sfcm [6:0] 1 chip-erase x x 55h 01h block-erase ah 2 x 55h 0dh sector-erase ah al x 0bh byte-program ah al di 0eh burst-program ah al di 06h byte-verify (read) ah al do 0ch notes: x = don ? t care; al = address low order byte; ah = address high order byte; di = data input; do = data output all other values are in hex 1 interrupt/polling enable for flash operation completion sfcm[7] = 1: interrupt enable for flash operation completion 0: polling enable for flash operation completion 2 sfah[7] = 0: selects block 0: sfah[7:4] = fh selects block 1 t able 6: i n -a pplication p rogramming m ode c ommands 344 pgm t6.3 t able 7: f lash m emory p rogramming /v erification p arameters parameter 1,2 symbol min max units reset setup time t su 3 s read-id command width t rd 1 s psen# setup time t es 1.125 s address, command, data setup time t ads 0ns chip-erase time t ce 11.7 ms block-erase time t be 9.4 ms sector-erase time t se 1.1 2.3 ms program setup time t prog 1.2 ? address, command, data hold t dh 0ns byte-program time 3 t pb 110 s verify command delay time t oa 50 ns verify high order address delay time t aha 50 ns verify low order address delay time t ala 50 ns first burst-program byte time 4 t bup1 85 s burst-program time 3,4 t bup 31 45 s burst-program recovery 4 t buprcv 110 s burst-program time-out limit t bupto 20 s note : 1. program and erase times will scale inversely relative to programming clock frequency. 2. all timing measurements are from the 50% of the input to 50% of the output. 3. each byte must be erased before program. 4. external host mode only. 344 pgm t7.4 31 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 17: i n -a pplication p rogramming m ode i/o a ssignment timers/counters the sst89c54/58 have three 16-bit registers that can be used as either timers or event counters. the three timers/counters are the timer 0 (t0), timer 1 (t1), and timer 2 (t2) registers. these three registers are located in the sfr as pairs of 8-bit registers. the low byte of the t0 register is stored in the timer 0 lsb (tl0) special function register and the high byte of the t0 register is stored in the timer 0 msb (th0) special function regis- ter. the low byte of the t1 register is stored in the timer lsb (tl1) special function register and the high byte of the t1 register is stored in the timer 1 msb (th1) special function register. the low byte of the t2 register is stored in the timer 2 lsb (tl2) special function register and the high byte of the t2 register is stored in the timer 2 msb (th2) special function register. serial i/o (uart) the sst89c54/58 serial i/o ports is a full duplex port that allows data to be transmitted and received simulta- neously in hardware by the transmit and receive regis- ters, respectively, while the software is performing other tasks. the serial i/o port performs the function of an uart (universal asynchronous receiver/transmitter) chip. the transmit and receive registers are both located in the serial data buffer (sbuf special function register. writing to the sbuf register loads the transmit register, and reading from the sbuf register obtains the contents of the receive registers. the serial i/o port has four modes of operation which are selected by the serial port mode specifier (sm0 and sm1) bits of the serial port control (scon) special function register. in all four modes, transmission is initi- ated by any instruction that uses the sbuf register as a destination register. reception is initiated in mode 0 when the receive interrupt (ri) flag bit of the serial port control (scon) special function register is cleared and the reception enable/ disable (ren) bit of the scon register is set. reception is initiated in the other modes by the incoming start bit if the ren bit of the scon register is set. general purpose i/o general purpose i/o port 0 v ss xtal1 xtal2 t2 t2ex port 3 v dd rst port 1 port 2 ea# ale / prog# psen# 7 6 5 wr# t1 t0 rd# int0# txd rxd int1# 4 3 2 1 0 7 6 7 6 5 4 3 2 1 0 0 7 6 0 344 ill f09.1 address bus address and data bus port 0 v ss xtal1 xtal2 t2 t2ex port 3 v dd rst accessing internal memory (ea# = 0) accessing external memory (ea# = 1) port 1 port 2 ea# ale / prog# psen# 7 6 5 wr# t1 t0 rd# int0# txd rxd int1# 4 3 2 1 0 7 6 7 6 5 4 3 2 1 0 0 7 6 0 32 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications f igure 18: b lock d iagram of p rogrammable w atchdog t imer watchdog timer the sst89c54/58 offer an enhanced programmable watchdog timer (wdt) for fail safe protection against software deadlock and allows an automatic recovery. to protect the system against software deadlock, the user has to refresh the wdt within a user defined time period. if the software fails to do this periodical refresh, an internal hardware reset will be initiated. the software can be designed such that the wdt times out if the program does not work properly. it also times out if a software error is based on the hardware related prob- lems. 344 ill f10.2 wdt upper byte wdt reset internal reset 7.7 ms min. counter clk ext. rst wdtc wdtd the wdt in the sst89c54/58 share the same time base with the flash controller unit. when the flash controller unit is operating, the time base will be re-started by the hardware periodically, therefore delaying the time-out period of the watchdog timer. the upper 8-bits of the time base register are used as the reload register of the wdt. the internal oscillator that drives the wdt operates within a frequency range as shown in table 11. minimum clock cycle for the wdt is 7.7ms. figure 18 provides a block diagram of the wdt. two sfrs (wdtc and wdtd) control watchdog timer op- eration. during idle mode, wdt operation is temporarily suspended, and resumes upon an interrupt exit from idle. security lock the security feature protects against software piracy and prevents the contents of the flash from being read by unauthorized parties. it also protects against code corrup- tion resulting from accidental erasing and programming to the internal flash memory locations. there are two different types of security locks in the sst89c54/58 security lock system: hard lock and softlock. hard lock when the hard lock is activated, the movc instructions executed from un-locked or softlocked program address space, are disabled from reading code bytes in hard locked memory blocks (see table 9). the hard lock can either lock both flash memory blocks or just lock the upper flash memory block (block 1). all external host and iap commands except for chip-erase are ignored for the hard locked memory blocks. softlock softlock allows flash contents to be altered under a secure environment. this lock option allows the user to update program code in the soft locked memory block through in- application programming mode under a predetermined secure environment. for example, if the block 1 (4k) memory block is locked, and the block 0 (16k/32k) memory block is soft locked, code residing in block 1 can program block 0. the following iap mode commands issued through the command mailbox register, sfcm, executed from a hard locked block can be operated on a soft locked block: block-erase, sector-erase, byte-program, burst-program and byte- verify. in external host mode, softlock behaves the same as a hard lock. 33 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 19: s ecurity l ock l evels notes: 1. p = programmed (cell logic state = 0), u = unprogrammed (cell logic state = 1), n = not locked, l = hard locked, s = softlocked level 1 level 2 level 3 level 4 uuu/nn puu/ll ppu/ll pup/ll = upu/ss uup/ls ppp/ll 344 ill f38.1 status of the security lock the three bits that indicate the sst89c54/58 security lock status are located in sfst[7:5]. as shown in figure 19 and table 8, the three security lock bits control the lock status of the primary and secondary blocks of memory. there are four distinct levels of security lock status. in the first level, none of the security lock bits are programmed and both blocks are unlocked. in the second level, although, both blocks are now locked and cannot be written, they are available for read operation via byte-verify. in the third level, three different options are available: block 1 hard lock / block 0 softlock, softlock on both blocks, and hard lock on both blocks. locking both blocks is the same as level 2 except read operation isn ? t available. the fourth level of security is the most secure level operation. it doesn ? t allow read/write of internal memory or boot from external memory. please note that for unused combina- tions of the security lock bit the chip will default to level 4 status. t able 8: s ecurity l ock o ptions security lock bits security status of: security type level sfst[7:5] 1 1 2 1 3 1 block 1 block 0 1 000 u u u unlock unlock no security features are enabled. 2 100 p u u hard lock hard lock movc instructions executed from external program memory are disabled from fetching code bytes from internal memory, ea# is sampled and latched on reset, and further programming of the flash is disabled. 3 110 p p u hard lock hard lock level 2 plus verify disabled, both blocks locked. 101 p u p 010 u p u softlock softlock level 2 plus verify disable. code in block 1 can program block 0 and vice versa. 001 u u p hard lock softlock level 2 plus verify disabled, code in block 1 can program block 0. 4 111 p p p hard lock hard lock same as level 3, but external boot is disabled. notes: 1 1, 2, and 3, respectively, refer to the first, second, and third security lock bits. 2 p = programmed (cell logic state = 0), u = unprogrammed (cell logic state = 1). 3 sfst[7:5] = security lock decoding bits (secd) 4 all unused combinations default to level 4, ? ppp ? . 344 pgm t8.4 34 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications reset a system reset initializes the mcu and begins program execution at program memory location 0000h. the reset input for the sst89c54/58 is the rst pin. in order to reset the sst89c54/58, a logic level high must be applied to the rst pin for at least two machine cycles (24 clocks), after the oscillator becomes stable. ale, psen# are weakly pulled high during reset. during reset, ale and psen# output a high level in order to perform correct reset. this level must not be affected by external element. a system reset will not affect the 256 bytes of on-chip ram while the sst89c54/58 is running, how- ever, the contents of the on-chip ram during power up are indeterminate. all special function registers (sfr) return to their reset values, which are outlined in tables 3 a to 3 e . power-on reset at initial power up, the port pins will be in a random state until the oscillator has started and the internal reset algorithm has written one ? s to all the pins. powering up the device without a valid reset could cause the cpu to start executing instructions from an indetermi- nate location. such undefined states may inadvert- ently corrupt the code in the flash. when power is applied to the sst89c54/58, the rst pin must be held long enough for the oscillator to start up (usually several milliseconds for a low frequency crys- tal), in addition to two machine cycles for a valid power- on reset. an example of a method to extend the rst signal is to implement a rc circuit by connecting the rst pin to v dd through a 10? capacitor and to v ss through an 8.2k w resistor as shown in figure 20. note that if an rc circuit is being used, provisions should be made to ensure the v dd rise time does not exceed 1 millisecond and the oscillator start-up time does not exceed 10 milliseconds. for a low frequency oscillator with slow start-up time the reset signal must be extended in order to account for the slow start-up time. this method maintains the necessary relationship between v dd and rst to avoid program- ming at an indeterminate location, which may cause corruption in the code of the flash. for more information on system level design techniques, please review de- sign considerations for the sst flashflex51 family microcontroller application note. t able 9: movc a ccess with s ecurity l ock a ctivated sfst[7:5] movc address 1 target address 2 movc allowed 3 011/100/101/110/111 block 0/1 any location y (hard lock on external memory block 0/1 n both blocks) external y block 0 y 001 block 0 block 1 n (block 0 = softlock external y block 1 = hard lock) block 1 any location y external block 0/1 n external y 010 block 0/1 any location y (softlock external block 0/1 n on both blocks) external y 000 any location any location y notes: 1 location of movc instruction 2 target address is the location of the instruction being read 3 y = indicates movc instruction is allowed; n = indicates movc instruction is not allowed; 344 pgm t9.3 35 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 power-saving modes the sst89c54/58 provides three power saving modes of operation for applications where power consumption is critical. the three power saving modes are: idle, power down and standby (stop clock). idle idle mode is entered by a software command which sets the idl bit in the pcon register. in idle mode the program counter (pc) is stopped. the system clock continues to run and all interrupts and peripheral func- tions (timers/counters, serial port, etc.) are active. in this mode the power dissipation is approximately 25% of the fully active device. the sst89c54/58 exits idle mode through either a system interrupt or a hardware reset. the interrupt clears the idl bit and the program resumes execution begin- ning at the instruction immediately following the one which invoked the idle mode. a hardware reset starts the device similar to power-on reset. f igure 20: p ower -o n r eset c ircuit power down the power down mode is also entered by a software command which sets the pd bit in the pcon register. in power down mode, the clock is stopped and external interrupts are active for level sensitive interrupt only. power down mode reduces the current dissipation to 15?, typical. the sst89c54/58 exits power down mode through either an enabled external level sensitive interrupt or a hardware reset. the interrupt clears the pd bit and the program resumes execution beginning at the instruction immediately following the one which invoked the power down mode. a hardware reset starts the device similar to power-on reset. standby (stop clock) standby mode is similar to power down mode, except that power down mode is initiated by a software com- mand and standby mode is initiated by external hard- ware gating off the external clock to the sst89c54/58 device. the current dissipation is reduced to 15?, typical. the on-chip sram and sfr data are maintained in standby mode. the device resumes operation at the next instruction when the clock is reapplied to the part. table 10 outlines the different power-saving modes, including entry and exit procedures and mcu functionality. 344 ill f31.1 v dd v dd 10? + - 8.2k sst89c54/58 rst xtal2 xtal1 12mhz c 1 c 2 36 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications t able 10: sst89c54/58 p ower s aving m odes mode initiated by current drain state of mcu exited by idle mode power down mode standby (stop clock) mode software (set idl bit in pcon) software (set pd bit in pcon) external hardware gates off the external clock input to the mcu. this gating should be synchronized with an input clock transition (low-to-high or high-to- low). 25% of i dd level when device is fully active typically 15 microamps. minimum v dd for power down mode is 2.7v. typically 15 microamps. minimum v dd for standby mode is 2.7v. clk is running. interrupts, serial port and timers/counters are active. program counter is stopped. ale and psen# signals at a high level during idle. all registers remain unchanged. clk is stopped. on- chip sram and sfr data is maintained. ale and psen# signals at a low level during power down. external interrupts are only active for level sensitive interrupts, if enabled. clk is frozen. on-chip sram and sfr data is maintained. ale and psen# are maintained at the levels prior to the clock being frozen. enabled interrupt or hardware reset. start of interrupt clears idl bit and exits idle mode, after the isr reti in- struction program re- sumes execution be- ginning at the instruc- tion following the one that invoked idle mode. if needed in a specific application, a user could consider placing two or three nop in- structions after the in- struction that invokes idle mode to eliminate any problems. a hard- ware reset restarts the device similar to a power-on reset. enabled external level sensitive interrupt or hardware reset. start of interrupt clears pd bit and exits power down mode, after the isr reti instruction pro- gram resumes execu- tion beginning at the in- struction following the one that invoked power down mode. if needed in a specific applica- tion, a user could con- sider placing two or three nop instructions after the instruction that invokes power down mode to eliminate any problems. a hardware reset restarts the de- vice similar to a power- on reset. gate on external clock. program execution resumes at the instruction following the one during which the clock was gated off. 344 pgm t10.3 37 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 21: o scillator c haracteristics 344 ill f12.1 xtal2 xtal1 vss c 1 using the on-chip oscillator external clock drive c 2 r s xtal2 xtal1 vss external oscillator signal nc clock input options shown in figure 21 are the input and output of an internal inverting amplifier (xtal1, xtal2), which can be config- ured for use as an on-chip oscillator. when driving the device from an external clock source, xtal2 should be left disconnected and xtal1 should be driven. at start-up, the external oscillator may encounter a higher capacitive load at xtal1 due to interaction be- tween the amplifier and its feedback capacitance. how- ever, the capacitance will not exceed 15pf once the external signal meets the v il and v ih specifications. recommended capacitor values for crystal oscillator crystal manufacturer, supply voltage, and other factors may cause circuit performance to differ from one applica- tion to another. c1 and c2 should be adjusted appropri- ately for each design. the table below, shows the typical values for c1 and c2 at a given frequency. if, following the satisfactory selection of all external components, the circuit is still over driven, a series resistor, r s , may be added. r ecommended values for crystal oscillator frequency c1 and c2 r s (optional) < 8mhz 90-110pf 100 w 8-12mhz 18-22pf 200 w >12mhz 18-22pf 200 w more specific information on on-chip oscillator design can be found in flashflex51 oscillator circuit design considerations application note. 38 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications electrical specification absolute maximum stress ratings (applied conditions greater than those listed under ? absolute maximum stress ratings ? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) ambient temperature under bias ................................................................................................. .. -55 c to +125 c storage temperature ............................................................................................................ ......... -65 c to + 150 c voltage on ea# pin to v ss ............................................................................................................................... ....................... -0.5v to +14.0v transient voltage (<20ns) on any other pin to v ss ..................................................................................................... -1.0v to +6.5v maximum i ol per i/o pins p1.5, p1.6, p1.7 ................................................................................................. ..... 20ma maximum i ol per i/o for all other pins.................................................................................................... ......... 15ma package power dissipation capability (t a = 25 c) ........................................................................................... 1.5w through hole lead soldering temperature (10 seconds) ........................................................................... ... 300 c surface mount lead soldering temperature (3 seconds) ........................................................................... .... 240 c output short circuit current (1) ............................................................................................................................... .................................... 50ma note (1) outputs shorted for no more than one second. no more than one output shorted at a time. (based on package heat transfer limitations, not device power consumption.) notice: this specification contains preliminary information on new products in production. the specifications are subject to change without notice. operation range t able 11: o perating r ange symbol description min. max unit t a ambient temperature under bias standard 0 +70 c industrial -40 +85 c v dd supply voltage 2.7 5.5 v f osc oscillator frequency 0 33 mhz for in-application programming 0.25 33 mhz t able 12: r eliability c haracteristics symbol parameter minimum specification units test method n end endurance 10,000 cycles mil-std-883, method 1033 t dr (1) data retention 100 years jedec standard a103 v zap_hbm (1) esd susceptibility 2000 volts jedec standard a114 human body model v zap_mm (1) esd susceptibility 200 volts jedec standard a115 machine model i lth (1) latch up 100+i dd ma jedec standard 78 note: (1) this parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 344 pgm t12.1 344 pgm t11.0 39 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 4.5 < v dd < 5.5 4.5 < v dd < 5.5 4.5 < v dd < 5.5 v dd = 4.5v i ol = 16ma v dd = 4.5v i ol = 100? 1 i ol = 1.6ma 1 i ol = 3.5ma 1 v dd = 4.5v i ol = 200? 1 i ol = 3.2ma 1 v dd = 4.5v i oh = -10? i oh = -30? i oh = -60? v dd = 4.5v i oh = -200? i oh = -3.2ma v in = 0.4v v in = 2v 0.45 < v in < v dd -0.3 @ 1 mhz, 25 c t amb =0 c to + 70 c t amb =-40 c to +85 c minimum v dd = 2.7v t amb =0 c to + 70 c t amb =-40 c to +85 c 344 pgm t13a.5 t able 13 a : dc e lectrical c haracteristics t amb = oc to + 70c or -40c to +85c , 33mh z devices ; 5v 10%; v ss = 0v symbol parameter test conditions limits units min max v il v ih v ih1 v ol v ol v ol1 v oh v oh1 i il i tl i li r rst c io i dd input low voltage input high voltage (ports 0,1,2,3) input high voltage (xtal1, rst) output low voltage (ports 1.5, 1.6, 1.7) output low voltage (ports 1, 2, 3) 5 output low voltage (port 0, ale, psen#) 4,5 output high voltage (ports 1, 2, 3, ale, psen#) 2 output high voltage (port 0 in external bus mode) 2 logical 0 input current (ports 1, 2, 3) logical 1-to-0 transition current (ports 1, 2, 3) 3 input leakage current (port 0) rst pulldown resistor pin capacitance 6 power supply current 7 in-application mode @ 12 mhz @ 33 mhz active mode @ 12 mhz @ 33 mhz idle mode @ 12 mhz @ 33 mhz standby (stop clock) mode power down mode -0.5 0.2v dd + 0.9 0.7v dd v dd - 0.3 v dd - 0.7 v dd ? 1.5 v dd - 0.3 v dd - 0.7 -1 40 0.2v dd - 0.1 v dd + 0.5 v dd + 0.5 1.0 0.3 0.45 1.0 0.3 0.45 -75 -650 ?0 225 15 70 88 25 45 12 24 100 125 40 50 v v v v v v v v v v v v v v ? ? ? k w pf ma ma ma ma ma ma ? ? ? ? 40 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 344 pgm t13b.3 t able 13 b : dc e lectrical c haracteristics t amb = oc to + 70c or -40c to +85c , 12 mh z devices ; 3v 10%; v ss = 0v symbol parameter test conditions limits units min max v il v ih v ih1 v ol v ol v ol1 v oh v oh1 i il i tl i li r rst c io i dd input low voltage input high voltage (ports 0,1,2,3) input high voltage (xtal1, rst) output low voltage (ports 1.5, 1.6, 1.7) output low voltage (ports 1, 2, 3) 5 output low voltage (port 0, ale, psen#) 4,5 output high voltage (ports 1, 2, 3, ale, psen#) 2 output high voltage (port 0 in external bus mode) 2 logical 0 input current (ports 1, 2, 3) logical 1-to-0 transition current (ports 1, 2, 3) 3 input leakage current (port 0) rst pulldown resistor pin capacitance 6 power supply current 7 in-application mode active mode idle mode standby (stop clock) mode power down mode 2.7 < v dd < 3.3 2.7 < v dd < 3.3 2.7 < v dd < 3.3 v dd = 2.7v i ol = 16ma v dd = 2.7v i ol = 100? 1 i ol = 1.6ma 1 i ol = 3.5ma 1 v dd = 2.7v i ol = 200? 1 i ol = 3.2ma 1 v dd = 2.7v i oh = -10? i oh = -30? i oh = -60? v dd = 2.7v i oh = -200? i oh = -3.2ma v in = 0.4v v in = 2v 0.45 < v in < v dd -0.3 @ 1 mhz, 25 c t amb =0 c to + 70 c t amb =-40 c to +85 c minimum v dd = 2.7v t amb =0 c to + 70 c t amb =-40 c to +85 c -0.5 0.2v dd + 0.9 0.7v dd v dd - 0.3 v dd - 0.7 v dd ? 1.5 v dd - 0.3 v dd - 0.7 -1 40 0.7 v dd + 0.5 v dd + 0.5 1.0 0.3 0.45 1.0 0.3 0.45 -75 -650 ?0 225 15 70 22 6.5 70 88 40 50 v v v v v v v v v v v v v v ? ? ? k w pf ma ma ma ? ? ? ? 41 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 notes: 1. capacitive loading on ports 0 & 2 may cause spurious noise to be superimposed on the v ol s of ale and ports 1 & 3. the noise due to external bus capacitance discharging into the port 0 & 2 pins when the pins make 1 -to- 0 transitions during bus operations. in the worst cases (capacitive loading > 100pf), the noise pulse on the ale pin may exceed 0.8v. in such cases, it may be desirable to quali fy ale with a schmitt trigger, or use an address latch with a schmitt trigger strobe input. 2. capacitive loading on ports 0 & 2 may cause the v oh on ale and psen# to momentarily fall below the v dd - 0.7 specification when the address bits are stabilizing. 3. pins of ports 1, 2 & 3 source a transition current when they are being externally driven from 1 to 0. the transition current reaches its maximum value when vin is approximately 2v. 4. load capacitance for port 0, ale & psen#= 100pf, load capacitance for all other outputs= 80pf. 5. under steady state (non-transient) conditions, i ol must be externally limited as follows: maximum i ol per port pin: 15ma maximum i ol per 8-bit port: 26ma maximum i ol total for all outputs: 71ma if i ol exceeds the test condition, v oh may exceed the related specification. pins are not guaranteed to sink current greater than the listed test conditions. 6. pin capacitance is characterized but not tested. ea# is 25pf (max). 7. see figures 22, 23, 24 and 25 for test conditions. minimum v dd for power down is 2.7v. f igure 22: i dd t est c ondition , a ctive m ode f igure 23: i dd t est c ondition , i dle m ode f igure 24: i dd t est c ondition , p ower d own m ode f igure 25: i dd t est c ondition , s tandby (s top c lock ) m ode v dd v dd v dd v dd p0 ea# rst xtal2 (nc) clock signal all other pins disconnected 8xc5x xtal1 344 ill f26.0 v ss i dd v dd v dd v dd p0 ea# rst xtal2 (nc) clock signal all other pins disconnected 8xc5x xtal1 344 ill f24.0 v ss i dd v dd v dd v dd v dd = 5v p0 ea# rst xtal2 (nc) all other pins disconnected 8xc5x xtal1 344 ill f33.3 v ss i dd v dd v dd v dd v dd = 3 or 5v p0 ea# rst xtal2 (nc) all other pins disconnected 8xc5x xtal1 344 ill f25.2 v ss i dd 42 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications ac electrical characteristics ac characteristics: (over operating conditions; load capacitance for port 0, ale, and psen# = 100pf; load capacitance for all other outputs = 80pf) t able 14: ac e lectrical c haracteristics t amb = 0c to +70c or -40c to +85c, v dd = 3v10% @ 12mh z , 5v10% @ 33mh z , v ss = 0 symbol parameter oscillator units 12mhz 33mhz variable min max min max min. max. 1/t clcl oscillator frequency 0 33 mhz t lhll ale pulse width 127 20 2t clcl - 40 ns t avll address valid to ale low 43 t clcl - 40 (5v) ns 5t clcl - 25 (3v) ns t llax address hold after ale low 53 t clcl - 30 (5v) ns 5t clcl - 25 (3v) ns t lliv ale low to valid instr in 234 4t clcl - 100 (5v) ns 56 4t clc l - 65 (3v) ns t llpl ale low to psen# low 53 t clcl - 30 (5v) ns 5t clcl - 25 (3v) ns t plph psen# pulse width 205 46 3t clcl - 45 ns t pliv psen# low to valid instr in 145 3t clcl - 105 (5v) ns 35 3t clcl - 55 (3v) ns t pxix input instr hold after psen# 0 ns t pxiz input instr float after psen# 59 t clcl - 25 (5v) ns 5t clcl - 25 (3v) ns t aviv address to valid instr in 312 5t clcl - 105 (5v) ns 71 5t clcl - 80 (3v) ns t plaz psen# low to address float 10 10 10 ns t rlrh rd# pulse width 400 82 6t clcl - 100 ns t wlwh write pulse width (we#) 400 82 6t clcl - 100 ns t rldv rd# low to valid data in 252 5t clcl - 165 (5v) ns 61 5t clcl - 90 (3v) ns t rhdx data hold after rd# 0 0 0 ns t rhdz data float after rd# 107 2t clcl - 60 (5v) ns 35 2t clcl - 25 (3v) ns t lldv ale low to valid data in 517 8t clcl - 150 (5v) ns 150 8t clcl - 90 (3v) ns t avdv address to valid data in 585 9t clcl - 165 (5v) ns 180 9t clcl - 90 (3v) ns t llwl ale low to rd# or wr# low 200 300 40 140 3t clcl - 50 3t clcl + 50 ns t avwl address to rd# or wr# low 203 4t clcl ? 130 (5v) ns 46 4t clcl ? 75 (3v) ns t qvwx data valid to wr# transition 33 t clcl - 50 (5v) ns 0t clcl - 30 (3v) ns t whqx data hold after wr# 33 t clcl - 50 (5v) ns 3t clcl - 27 (3v) ns t qvwh data valid to wr# high 433 7t clcl - 150 (5v) ns 140 7t clcl - 70 (3v) ns t rlaz rd# low to address float 0 0 0 ns t whlh rd# to wr# high to ale high 43 123 t clcl - 40 (5v) t clcl + 40 (5v) ns 555t clcl - 25 (3v) t clcl + 25 (3v) ns 344 pgm t14.2 43 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 v lt ac inputs during testing are driven at v iht (v dd -0.5v) for logic "1" and v ilt (0.45v) for a logic "0". measurement reference points for inputs and outputs are at v ht (0.2v dd + 0.9) and v lt (0.2v dd - 0.1) for timing purposes a port pin is no longer floating when a 100 mv change from load voltage occurs, and begins to float when a 100 mv change from the loaded v oh /v ol level occurs. i ol /i oh = ?20ma. v ht v iht v ilt v load +0.1v v load -0.1v v oh -0.1v timing reference points v ol +0.1v v load 344 ill f28b.1 344 ill f28a.2 note: v ht - v high test v lt - v low test v iht -v input high test v ilt - v input low test f igure 27: e xternal p rogram m emory r ead c ycle ac characteristics explanation of symbols each timing symbol has 5 characters. the first character is always a ? t ? (stands for time). the other characters, depending on their positions, stand for the name of a signal or the logical status of that signal. the following is a list of all the characters and what they stand for. a: address c: clock d input data h: logic level high i: instruction (program memory contents). l: logic level low or ale p: psen# q: output data r: rd# signal t: time v: valid w: wr# signal x: no longer a valid logic level z: high impedance (float) for example: t avll =time from address valid to ale low t llpl =time from ale low to psen# low f igure 26: ac t esting i nput /o utput , f loat w aveform ac t esting i nput /o utput f loat w aveform 344 ill f13.3 port 2 port 0 psen# ale a7 - a0 t llax t plaz t pxiz t llpl t aviv t avll t pxix t lhll t lliv t pliv t plph instr in a15 - a8 a15 - a8 a7 - a0 44 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications f igure 28: e xternal d ata m emory r ead c ycle f igure 29: e xternal d ata m emory w rite c ycle 344 ill f14.3 port 2 port 0 rd# psen# ale t lhll p2[7:0] or a15-a8 from dph a7-a0 from ri or dpl t avdv t avwl data i n instr in t rlaz t avll t llax t llwl t lldv t rlrh t rldv t rhdz t whlh t rhdx a15-a8 from pch a7-a0 from pcl 344 ill f15.3 port 2 port 0 wr# psen# ale t lhll p2[7:0] or a15-a8 from dph a7-a0 from ri or dpl data out instr in t avll t avwl t llwl t llax t qvwx t wlwh t qvwh t whqx t whlh a15-a8 from pch a7-a0 from pcl t able 15: e xternal c lock d rive symbol parameter oscillator units 12mhz 33mhz variable min max min max min. max. 1/t clcl oscillator frequency 0 33 mhz t chcx high time 0.35t clcl 0.65t clcl ns t clcx low time 0.35t clcl 0.65t clcl ns t clch rise time 20 5 ns t chcl fall time 20 5 ns 344 pgm t15.2 45 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 f igure 31: s hift r egister m ode t iming w aveforms t able 16: s erial p ort t iming symbol parameter oscillator units 12mhz 33mhz variable min max min max min. max. t xlxl serial port clock cycle 0 0.36 12t clcl ms time t qvxh output data setup 700 167 10t clcl - 133 ns to clock rising edge t xhqx output data hold after 50 2t clcl - 117 ns clock rising edge 10 2t clcl - 50 ns t xhdx input data hold after 0 0 0 ns clock rising edge t xhdv clock rising edge 700 167 10t clcl - 133 ns to input data valid 344 pgm t16.1 f igure 30: e xternal c lock d rive w aveform 0.2 v dd -0.1 0.45 v t chcl t clcl t clch t clcx t chcx 0.7 v dd v dd = -0.5 344 ill f30.0 344 ill f29.0 ale 0 instruction clock output data write to sbuf valid valid valid valid valid valid valid valid input data clear ri 01 2 34 567 t xlxl t qvxh t xhqx t xhdv t xhdx set ti set r i 1 2 3 4 5 6 7 8 46 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications device speed suffix 1 suffix 2 sst89c5x - 33 - x x - x x package modifier i = 40 pins j = 44 pins package type p = pdip n = plcc tq = tqfp operation temperature c = commercial = 0 to 70 c i = industrial = -40 to 85 c release id blank = initial release a = first enhancement operating frequency 33 = 0-33mhz feature set and flash memory size 54 = c52 feature set + 16(20)* kbyte 58 = c52 feature set + 32(36)* kbyte * = 4k additional flash can be enabled via vis bit in sfcf voltage range c = 2.7-5.5v device family 89 = c51 core product ordering information product identification descriptor part number valid combinations sst89c54 valid combinations part number package pins v dd speed temperature sst89c54-33-c-pi pdip 40 2.7-5.5 0-33mhz commercial sst89c54-33-c-nj plcc 44 2.7-5.5 0-33mhz commercial sst89c54-33-c-tqj tqfp 44 2.7-5.5 0-33mhz commercial sst89c54-33-i-pi pdip 40 2.7-5.5 0-33mhz industrial sst89c54-33-i-nj plcc 44 2.7-5.5 0-33mhz industrial sst89c54-33-i-tqj tqfp 44 2.7-5.5 0-33mhz industrial sst89c58 valid combinations part number package pins v dd speed temperature sst89c58-33-c-pi pdip 40 2.7-5.5 0-33mhz commercial sst89c58-33-c-nj plcc 44 2.7-5.5 0-33mhz commercial sst89c58-33-c-tqj tqfp 44 2.7-5.5 0-33mhz commercial sst89c58-33-i-pi pdip 40 2.7-5.5 0-33mhz industrial sst89c58-33-i-nj plcc 44 2.7-5.5 0-33mhz industrial sst89c58-33-i-tqj tqfp 44 2.7-5.5 0-33mhz industrial example: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability and to determine availability of new combinations. 47 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 part number cross-reference guide intel sst package i87c54 16k eprom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq i87c58 32k eprom & 256b ram sst89c58 4k flash, 32k flash & 256b ram p n tq i87l54 16k rom (otp) & 256b ram sst89c54 4k flash, 16k flash & 256b ram n tq i87l58 32k rom (otp) & 256b ram sst89c58 4k flash, 32k flash & 256b ram n tq i87c51fb 16k eprom & 256b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq i87c51fc 32k eprom & 256b ram sst89c58* 4k flash, 32k flash & 256b ram p n tq atmel sst package at89c52 8k flash & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq at89lv52 8k flash & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq at89s53 12k flash & 256b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq at89ls53 12k flash & 256b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq at89c55 20k flash & 256b ram sst89c58* 4k flash, 32k flash & 256b ram p n tq at89lv55 20k flash & 256b ram sst89c58* 4k flash, 32k flash & 256b ram p n tq temic sst package 80c51 4k rom & 256b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq 80c52 8k rom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq 83c154 16k rom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq 83c154d 32k rom & 256b ram sst89c58 4k flash, 32k flash & 256b ram p n tq 87c51 4k eprom & 256b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq 87c52 8k eprom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq philips sst package p80c54 16k rom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq p80c58 32k rom & 256b ram sst89c58 4k flash, 32k flash & 256b ram p n tq p87c54 16k eprom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq p87c58 32k eprom & 256b ram sst89c58 4k flash, 32k flash & 256b ram p n tq p87c524 16k eprom & 512b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq p87c528 32k eprom & 512b ram sst89c58* 4k flash, 32k flash & 256b ram p n tq p83c524 16k rom & 512b ram sst89c54* 4k flash, 16k flash & 256b ram p n p83c528 32k mrom & 512b ram sst89c58* 4k flash, 32k flash & 256b ram p n tq p89ce558 32k flash & 1k ram sst89c58* 4k flash, 32k flash & 256b ram winbond sst package w78c54 16k mrom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq w78c58 32k mrom & 256b ram sst89c58 4k flash, 32k flash & 256b ram p n tq w78e54 16k eeprom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq w78e58 32k eeprom & 256b ram sst89c58 4k flash, 32k flash & 256b ram p n tq issi sst package is80c52 8k rom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n tq is89c51 4k flash & 128b ram sst89c54 4k flash, 16k flash & 256b ram p n is89c52 8k flash & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n dallas sst package ds83c520 16k mrom & 256b ram sst89c54* 4k flash, 16k flash & 256b ram p n tq ds87c520 16k eprom ( otp ) & sst89c54* 4k flash, 16k flash & 256b ram p n tq 256b ram siemens sst package c501-1r 8k rom & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n c501-1e 8k rom (otp) & 256b ram sst89c54 4k flash, 16k flash & 256b ram p n c513a-h 12k eprom & 512b ram sst89c54* 4k flash, 16k flash & 256b ram n c503-1r 8k rom & 256b ram sst89c54* 4k flash, 16k flash & 256b ram n c504-2r 16k rom & 512b ram sst89c54* 4k flash, 16k flash & 256b ram tq p: pdip n: plcc tq: tqfp note: the sst89c58 can be substituted for any sst89c54 listing above. note: the sst89c59 can be substituted for any sst89c54 or sst89c58 listing above. * indicates sst similar function and not direct replacement/socket compatible. 48 ?2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 40-p in p lastic d ual - in -l ine p ackage (pdip) sst p ackage c ode : pi 44-l ead p lastic l ead c hip c arrier (plcc) sst p ackage c ode : nj packaging diagrams 40.pdippi-ill.6 pin #1 identifier c l 40 1 base plane seating plane .220 max. 12? 4 places .600 bsc .100 bsc .100 ? .200 .015 .022 .045 .055 .063 .090 .015 min. .065 .075 2.020 2.070 .008 .012 0? 15? .600 .625 .530 .557 note: 1. complies with jedec publication 95 ms-011 ac dimensions (except as noted), although some dimensions may be more string ent. ? = jedec min is .115; sst min is less stringent 2. all linear dimensions are in inches (min/max). 3. dimensions do not include mold flash. maximum allowable mold flash is .010 inches. .025 .045 .013 .021 .590 .630 .100 .112 .020 min. .165 .180 top view side view bottom view 144 .026 .032 .500 ref. 44.plcc.nj-ill.6 note: 1. complies with jedec publication 95 ms-018 ac dimensions (except as noted), although some dimensions may be more string ent. ? = jedec min is .650; sst min is less stringent 2. all linear dimensions are in inches (min/max). 3. dimensions do not include mold flash. maximum allowable mold flash is .008 inches. 4. coplanarity: 4 mils. .050 bsc. .050 bsc. .026 .032 .042 .056 .646 ? .656 .042 .048 .042 .048 optional pin #1 identifier .646 ? .656 .685 .695 .685 .695 .020 r. max. .147 .158 r. x45 ? 49 ? 2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 44-l ead t hin q uad f lat p ack (tqfp) sst p ackage c ode : tqj 44 111 33 23 12 34 22 44.tqfp-tqj-ill.3 pin 1 identifier(s) (either or both) note: 1. complies with jedec publication 95 ms-026 acb dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in mm (min/max). 3. coplanarity: 0.1 (0.05) mm. .09 .20 .75 .45 .15 .05 1.20 max. 1.05 .95 .30 .45 0.20 .80 bsc .020 12.0 bsc 10.0 bsc .30 .45 .80 bsc 10.0 bsc 12.0 bsc 1.00 ref 0 ? - 7 ? 50 ? 2000 silicon storage technology, inc. 344-2 8/00 flashflex51 mcu sst89c54 / sst89c58 preliminary specifications silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.ssti.com literature faxback 888-221-1178, international 732-544-2873 |
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